Short-time adsorption and desorption behavior of three high-boiling point organic contaminants, diethyl phthalate (DEP), tri-(2-chloroethyl)-phosphate (TCEP), and tri-(2-cloropropyl)-phosphate (TCPP), on silicon wafer surface were investigated Adsorption constants k(ads) and desorption constants k(des) were experimentally measured. Comparing the obtained kinetic parameters, the time dependent changes in their Surface concentrations were found to be governed by desorption constants. The adsorption and desorption constants were also measured as a function of temperature. Subsequently, a series of time dependent surface concentrations of DEP, TCEP, and TCPP were simulated under various. ambient concentrations. Finally, an estimation of the maximum allowable,wafer exposure according to the International Technology Roadmap for Semiconductors (ITRS) was performed. The results of this study can :Provide information to better control organic contamination and to meet requirements of the microelectronic devices qualities.